View MT18LD472AG_2023336.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

2, 4 meg x 72 nonbuffered dram dimms micron technology, inc., reserves the right to change products or specifications without notice. dm60.p65 C rev. 6/98 ? 1998, micron technology, inc. 1 2, 4 meg x 72 nonbuffered dram dimms obsolete dram module mt9ld272a(x), mt18ld472a(x) for the latest data sheet revisions, please refer to the micron web site: www.micron.com/mti/msp/html/datasheet.html features ? jedec-standard, eight-cas#, ecc pinout in a 168-pin, dual in-line memory module (dimm) ? 16mb (2 meg x 72) and 32mb (4 meg x 72) ? nonbuffered ? high-performance cmos silicon-gate process ? single +3.3v 0.3v power supply ? all inputs, outputs and clocks are ttl-compatible ? refresh modes: ras#-only, cas#-before-ras# (cbr) and hidden ? 2,048-cycle refresh distributed across 32ms ? fast-page-mode (fpm) or extended data-out (edo) page mode access cycles ? serial presence-detect (spd) options marking ? package 168-pin dimm (gold) g ? timing 50ns access -5* 60ns access -6 ? access cycles fast page mode none edo page mode x *edo version only pin symbol pin symbol pin symbol pin symbol 1v ss 43 v ss 85 v ss 127 v ss 2 dq0 44 oe2# 86 dq32 128 rfu 3 dq1 45 ras2# 87 dq33 129 nc/ras3#* 4 dq2 46 cas2# 88 dq34 130 cas6# 5 dq3 47 cas3# 89 dq35 131 cas7# 6v dd 48 we2# 90 v dd 132 rfu 7 dq4 49 v dd 91 dq36 133 v dd 8 dq5 50 nc 92 dq37 134 nc 9 dq6 51 nc 93 dq38 135 nc 10 dq7 52 cb2 94 dq39 136 cb6 11 dq8 53 cb3 95 dq40 137 cb7 12 v ss 54 v ss 96 v ss 138 v ss 13 dq9 55 dq16 97 dq41 139 dq48 14 dq10 56 dq17 98 dq42 140 dq49 15 dq11 57 dq18 99 dq43 141 dq50 16 dq12 58 dq19 100 dq44 142 dq51 17 dq13 59 v dd 101 dq45 143 v dd 18 v dd 60 dq20 102 v dd 144 dq52 19 dq14 61 nc 103 dq46 145 nc 20 dq15 62 rfu 104 dq47 146 rfu 21 cb0 63 nc 105 cb4 147 nc 22 cb1 64 v ss 106 cb5 148 v ss 23 v ss 65 dq21 107 v ss 149 dq53 24 nc 66 dq22 108 nc 150 dq54 25 nc 67 dq23 109 nc 151 dq55 26 v dd 68 v ss 110 v dd 152 v ss 27 we0# 69 dq24 111 rfu 153 dq56 28 cas0# 70 dq25 112 cas4# 154 dq57 29 cas1# 71 dq26 113 cas5# 155 dq58 30 ras0# 72 dq27 114 nc 156 dq59 31 oe0# 73 v dd 115 rfu 157 v dd 32 v ss 74 dq28 116 v ss 158 dq60 33 a0 75 dq29 117 a1 159 dq61 34 a2 76 dq30 118 a3 160 dq62 35 a4 77 dq31 119 a5 161 dq63 36 a6 78 v ss 120 a7 162 v ss 37 a8 79 nc 121 a9 163 nc 38 a10 80 nc 122 nc (a11) 164 nc 39 nc (a12) 81 nc 123 nc (a13) 165 sa0 40 v dd 82 sda 124 v dd 166 sa1 41 v dd 83 scl 125 rfu 167 sa2 42 rfu 84 v dd 126 rfu 168 v dd pin assignment (front view) 168-pin dimm key timing parameters edo operating mode speed t rc t rac t pc t aa t cac t cas -5 84ns 50ns 20ns 25ns 13ns 8ns -6 104ns 60ns 25ns 30ns 15ns 10ns fpm operating mode speed t rc t rac t pc t aa t cac t rp -6 110ns 60ns 35ns 30ns 15ns 40ns note: pin symbols in parentheses are not used on these modules but may be used for other modules in this product family. they are for reference only.
2, 4 meg x 72 nonbuffered dram dimms micron technology, inc., reserves the right to change products or specifications without notice. dm60.p65 C rev. 6/98 ? 1998, micron technology, inc. 2 2, 4 meg x 72 nonbuffered dram dimms obsolete part numbers edo operating mode part number configuration speed mt9ld272ag-5 x 2 meg x 72 ecc 50ns mt9ld272ag-6 x 2 meg x 72 ecc 60ns MT18LD472AG-5 x 4 meg x 72 ecc 50ns MT18LD472AG-6 x 4 meg x 72 ecc 60ns fpm operating mode part number configuration speed mt9ld272ag-6 2 meg x 72 ecc 60ns MT18LD472AG-6 4 meg x 72 ecc 60ns edo page mode edo page mode, designated by the x version, is an accelerated fast-page-mode cycle. the primary advan- tage of edo is the availability of data-out even after cas# goes back high. edo provides for cas# precharge time ( t cp) to occur without the output data going invalid. this elimination of cas# output control provides for pipelined reads. fast-page-mode modules have traditionally turned the output buffers off (high-z) with the rising edge of cas#. edo-page-mode drams operate like fast- page-mode drams, except data will remain valid or become valid after cas# goes high during reads, pro- vided ras# and oe# are held low. if oe# is pulsed while ras# and cas# are low, data will toggle from valid data to high-z and back to the same valid data. if oe# is toggled or pulsed after cas# goes high while ras# remains low, data will transition to and remain high-z. during an application, if the dq outputs are wire ord, oe# must be used to disable idle banks of drams. alterna- tively, pulsing we# to the idle banks during cas# high time will also high-z the outputs. independent of oe# control, the outputs will disable after t off, which is refer- enced from the rising edge of ras# or cas#, whichever occurs last. (refer to the 4 meg x 4 [mt4lc4m4e8] dram data sheet for additional information on edo functional- ity.) refresh returning ras# and cas# high terminates a memory cycle and decreases chip current to a reduced standby level. also, the chip is preconditioned for the next cycle during the ras# high time. correct memory cell data is pre- served by maintaining power and executing any ras# cycle (read, write) or ras# refresh cycle (ras#- only, cbr or hidden) so that all combinations of ras# addresses (a0-a9/a10) are executed at least every t ref, regardless of sequence. the cbr refresh cycle will in- voke the internal refresh counter for automatic ras# ad- dressing. serial presence-detect operation this module family incorporates serial presence-detect (spd). the spd function is implemented using a 2,048-bit eeprom. this nonvolatile storage device contains 256 bytes. the first 128 bytes can be programmed by micron to identify the module type and various dram organizations and timing parameters. the remaining 128 bytes of storage are available for use by the customer. system read/ write operations between the master (system logic) and the slave eeprom device (dimm) occur via a standard iic bus using the dimms scl (clock) and sda (data) signals, general description the mt9ld272a(x) and mt18ld472a(x) are randomly accessed 16mb and 32mb memories organized in a x72 configuration. they are specially processed to operate from 3v to 3.6v for low-voltage memory systems. during read or write cycles, each bit is uniquely addressed through the 21/22 address bits, which are en- tered 11 bits (a0 -a10) at ras# time and 10/11 bits (a0- a10) at cas# time. read and write cycles are selected with the we# input. a logic high on we# dictates read mode, while a logic low on we# dictates write mode. during a write cycle, data-in (d) is latched by the falling edge of we# or cas#, whichever occurs last. an early write occurs when we# is taken low prior to cas# falling. a late write or read-modify-write occurs when we# falls after cas# was taken low. during early write cycles, the data-outputs (q) will remain high-z regardless of the state of oe#. during late write or read-modify- write cycles, oe# must be taken high to disable the data- outputs prior to applying input data. if a late write or read-modify-write is attempted while keeping oe# low, no write will occur, and the data-outputs will drive read data from the accessed location. fast page mode fast-page-mode operations allow faster data opera- tions (read or write) within a row-address-defined page boundary. the fast-page-mode cycle is always initiated with a row address strobed in by ras#, followed by a column address strobed in by cas#. additional col- umns may be accessed by providing valid column addresses, strobing cas# and holding ras# low , thus executing faster memory cycles. returning ras# high terminates the fast-page-mode operation.
2, 4 meg x 72 nonbuffered dram dimms micron technology, inc., reserves the right to change products or specifications without notice. dm60.p65 C rev. 6/98 ? 1998, micron technology, inc. 3 2, 4 meg x 72 nonbuffered dram dimms obsolete together with sa(2:0), which provide eight unique dimm/ eeprom addresses. spd clock and data conventions data states on the sda line can change only during scl low. sda state changes during scl high are reserved for indicating start and stop conditions (figures 1 and 2). spd start condition all commands are preceded by the start condition, which is a high-to-low transition of sda when scl is high. the spd device continuously monitors the sda and scl lines for the start condition and will not respond to any command until this condition has been met. spd stop condition all communications are terminated by a stop condition, which is a low-to-high transition of sda when scl is high. the stop condition is also used to place the spd device into standby power mode. spd acknowledge acknowledge is a software convention used to indicate successful data transfers. the transmitting device, either master or slave, will release the bus after transmitting eight bits. during the ninth clock cycle, the receiver will pull the sda line low to acknowledge that it received the eight bits of data (figure 3). the spd device will always respond with an acknowl- edge after recognition of a start condition and its slave address. if both the device and a write operation have been selected, the spd device will respond with an acknowledge after the receipt of each subsequent eight-bit word. in the read mode the spd device will transmit eight bits of data, release the sda line and monitor the line for an acknowl- edge. if an acknowledge is detected and no stop condition is generated by the master, the slave will continue to trans- mit data. if an acknowledge is not detected, the slave will terminate further data transmissions and await the stop condition to return to standby power mode. scl sda data stable data stable data change figure 1 data validity scl sda start bit stop bit figure 2 definition of start and stop scl from master data output from transmitter data output from receiver 9 8 acknowledge figure 3 acknowledge response from receiver
2, 4 meg x 72 nonbuffered dram dimms micron technology, inc., reserves the right to change products or specifications without notice. dm60.p65 C rev. 6/98 ? 1998, micron technology, inc. 4 2, 4 meg x 72 nonbuffered dram dimms obsolete functional block diagram mt9ld272a(x) (16mb) a0-a10 oe2# we2# cas4# ras2# cas5# cas7# cas6# u1-u9 = mt4lc2m8b1 fast page mode u1-u9 = mt4lc2m8e7 edo page mode oe0# we0# cas0# ras0# cas1# cas3# cas2# 11 11 11 11 11 11 11 11 11 dq0-dq7 dq8-dq15 cb0-cb7 dq16-dq23 dq32-dq39 dq40-dq41 dq48-dq55 dq56-dq63 dq24-dq31 u1 a0?10 we# oe# ras# cas# dq0-dq7 u2 a0?10 we# oe# ras# cas# dq0-dq7 u3 a0?10 we# oe# ras# cas# dq0-dq7 u4 a0?10 we# oe# ras# cas# dq0-dq7 u6 a0?10 we# oe# ras# cas# dq0-dq7 u7 a0?10 we# oe# ras# cas# dq0-dq7 u8 a0?10 we# oe# ras# cas# dq0-dq7 u9 a0?10 we# oe# ras# cas# dq0-dq7 u5 a0?10 we# oe# ras# cas# spd scl sda sa0 sa1 sa2 a0 a1 a2 v dd v ss u1-u9 u1-u9
2, 4 meg x 72 nonbuffered dram dimms micron technology, inc., reserves the right to change products or specifications without notice. dm60.p65 C rev. 6/98 ? 1998, micron technology, inc. 5 2, 4 meg x 72 nonbuffered dram dimms obsolete functional block diagram mt18ld472a(x) (32mb) u1-u18 = mt4lc4m4b1 fast page mode u1-u18 = mt4lc4m4e8 edo page mode 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 oe0# cas1# cas2# cas3# we0# cas0# oe2# cas5# cas6# cas7# we2# cas4# a0-a10 ras0# ras2# 11 11 spd scl sda a0 a1 a2 sa0 sa1 sa2 we# oe# ras# cas# dq0-dq3 u1 a0?10 we# oe# ras# cas# dq0-dq3 u2 a0?10 we# oe# ras# cas# dq0-dq3 u3 a0?10 we# oe# ras# cas# dq0-dq3 u4 a0?10 we# oe# ras# cas# dq0-dq3 u5 a0?10 we# oe# ras# cas# dq0-dq3 u6 a0?10 we# oe# ras# cas# dq0-dq3 u7 a0?10 we# oe# ras# cas# dq0-dq3 u8 a0?10 we# oe# ras# cas# dq0-dq3 u9 a0?10 we# oe# ras# cas# dq0-dq3 u10 a0?10 we# oe# ras# cas# dq0-dq3 u11 a0?10 we# oe# ras# cas# dq0-dq3 u12 a0?10 we# oe# ras# cas# dq0-dq3 u13 a0?10 we# oe# ras# cas# dq0-dq3 u14 a0?10 we# oe# ras# cas# dq0-dq3 u15 a0?10 we# oe# ras# cas# dq0-dq3 u16 a0?10 we# oe# ras# cas# dq0-dq3 u17 a0?10 we# oe# ras# cas# dq0-dq3 dq0-dq3 dq4-dq7 dq8-dq11 dq12-dq15 dq16-dq19 dq20-dq23 dq24-dq27 dq28-dq31 dq32-dq35 dq36-dq39 dq40-dq43 dq44-dq47 cb4-cb7 cb4-cb7 dq48-dq51 dq52-dq55 dq56-dq59 dq06-dq63 u18 a0?10 v dd v ss u1-u18 u1-u18
2, 4 meg x 72 nonbuffered dram dimms micron technology, inc., reserves the right to change products or specifications without notice. dm60.p65 C rev. 6/98 ? 1998, micron technology, inc. 6 2, 4 meg x 72 nonbuffered dram dimms obsolete pin descriptions pin numbers symbol type description 30, 45 ras0#, ras2# input row-address strobe: ras# is used to clock-in the row- address bits. two ras# inputs allow for one x72 bank or two x36 banks. 28, 29, 46, 47, 112, cas0#-cas7# input column-address strobe: cas# is used to clock-in the 113, 130, 131 column-address bits, enable the dram output buffers and strobe the data inputs on write cycles. eight cas# inputs allow byte access control for any memory bank configuration. 27, 48 we0#, we2# input write enable: we# is the read/write control for the dq pins. if we# is low prior to cas# going low, the access is an early write cycle. if we# is high while cas# is low, the access is a read cycle, provided oe# is also low. if we# goes low after cas# goes low, then the cycle is a late write cycle. a late write cycle is generally used in conjunction with a read cycle to form a read-modify-write cycle. 31, 44 oe0#, oe2# input output enable: oe# is the input/output control for the dq pins. these signals may be driven, allowing late write cycles. 33-38, 117-121 a0-a10 input address inputs: these inputs are multiplexed and clocked by ras# and cas#. 2-5, 7-11, 13-17, 19-20, dq0-dq63 input/ data i/o: for write cycles, dq0-dq63 act as inputs to 55-58, 60, 65-67, 69-72, output the addressed dram location. for read access cycles, 74-77, 86-89,91-95, dq0-dq63 act as outputs for the addressed dram 97-101, 103-104, location. 139-142, 144, 149-151, 153-156, 158-161 21-22, 52-53, 105-106, cb0-cb7 input/output check bits. 136-137 42, 62, 111, 115, rfu C reserved for future use: these pins should be left 125-126, 128, 132, 146 unconnected. 6, 18, 26, 40, 41, 49, 59, v dd supply power supply: +3.3v 0.3v. 73, 84, 90, 102, 110, 124, 133, 143, 157, 168 1, 12, 23, 32, 43, 54, 64, v ss supply ground. 68, 78, 85, 96, 107, 116, 127, 138, 148, 152, 162 82 sda input/output serial presence-detect data. sda is a bidirectional pin used to transfer addresses and data into and data out of the presence-detect portion of the module. 83 scl input serial clock for presence-detect. scl is used to synchronize the presence-detect data transfer to and from the module. 165-167 sa0-sa2 input presence-detect address inputs. these pins are used to configure the presence-detect device.
2, 4 meg x 72 nonbuffered dram dimms micron technology, inc., reserves the right to change products or specifications without notice. dm60.p65 C rev. 6/98 ? 1998, micron technology, inc. 7 2, 4 meg x 72 nonbuffered dram dimms obsolete serial presence-detect matrix byte description entry (version) bit7 bit6 bit5 bit4 bit3 bit2 bit1 bit0 hex 0 number of bytes used by micron 128 1000000080 1 total number of spd memory bytes 256 0000100008 2 memory type fast page mode 0000000101 edo page mode 0000001002 3 number of row addresses 11 000010110b 4 number of column addresses 10 (16mb) 000010100a 11 (32mb) 000010110b 5 number of banks 1 0000000101 6 data width x72 0100100048 7 data width (continued) none 0000000000 8 voltage interface lvttl 0000000101 9 ras# access time ( t rac) 50ns (-5) 0011001032 60ns (-6) 001111003c 10 cas# access time ( t cac) 13ns (-5) 000011010d 15ns (-6) 000011110f 11 module configuration type ecc 0000001002 12 refresh rates 15.625 m s/normal 0000000000 13 dram width (primary dram) x8 (16mb) 0000100008 x4 (32mb) 0000010004 14 error checking dram data width x8 (16mb) 0000100008 x4 (32mb) 0000010004 15-61 reserved 0000000000 62 spd revision rev. 0 0000000000 63 checksum for bytes 0-62 16mb -5 (edo) 001110103a 16mb -6 (edo) 0100011046 16mb -6 (fpm) 0100010145 32mb -5 (edo) 0011001133 32mb -6 (edo) 001111113f 32mb -6 (fpm) 001111103e 64 manufacturers jedec id code micron 001011002c 65-71 manufacturers jedec code (cont.) 11111111ff 72 manufacturing location 0000000101 0000001002 0000001103 0000010004 73-90 module part number (ascii) xxxxxxxxxx 91 pcb identification code 1 0000000101 2 0000001002 3 0000001103 4 0000010004 92 identification code (cont.) 0 0000000000 93 year of manufacture in bcd xxxxxxxxxx 94 week of manufacture in bcd xxxxxxxxxx 95-98 module serial number xxxxxxxxxx 99-125 manufacture specific data (rsvd) CCCCCCCCC note: 1. 1/0: serial data, driven to high/driven to low. 2. x = variable data.
2, 4 meg x 72 nonbuffered dram dimms micron technology, inc., reserves the right to change products or specifications without notice. dm60.p65 C rev. 6/98 ? 1998, micron technology, inc. 8 2, 4 meg x 72 nonbuffered dram dimms obsolete absolute maximum ratings* voltage on v dd pin relative to v ss ................. -1v to +4.6v voltage on inputs or i/o pins relative to v ss ................................................ -1v to +4.6v operating temperature, t a (ambient) .......... 0 c to +70 c storage temperature (plastic) .................... -55 c to +125 c power dissipation ............................................................. 9w *stresses greater than those listed under absolute maxi- mum ratings may cause permanent damage to the device. this is a stress rating only, and functional operation of the device at these or any other conditions above those indi- cated in the operational sections of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect reliability. dc electrical characteristics and operating conditions (notes: 1) (v dd = +3.3v 0.3v) parameter/condition symbol size min max units notes supply voltage v dd all 3 3.6 v input high voltage: logic 1; all inputs v ih all 2 v dd + 0.3 v 30 input low voltage: logic 0; all inputs v il all -0.5 0.8 v 30 input leakage current: cas0#-cas7# i i 1 16mb -4 4 m a any input 0v v in v dd + 0.3v 32mb -6 6 (all other pins not under test = 0v) a0-a10 i i 2 16mb -18 18 m a 32mb -36 36 we0#, we2#, i i 3 16mb -10 10 m a oe0#, oe2# 32mb -18 18 ras0#-ras3# i i 4 16mb -10 10 32mb -18 18 m a output leakage current: dq0-dq63, i oz 16mb -5 5 m a dq is disabled; 0v v out v dd + 0.3v cb0-cb7 32mb -5 5 output levels: v oh all 2.4 C v output high voltage (i out = -2ma) output low voltage (i out = 2ma) v ol all C 0.4 v
2, 4 meg x 72 nonbuffered dram dimms micron technology, inc., reserves the right to change products or specifications without notice. dm60.p65 C rev. 6/98 ? 1998, micron technology, inc. 9 2, 4 meg x 72 nonbuffered dram dimms obsolete i cc operating conditions and maximum limits (notes: 1, 5, 6) (v dd = +3.3v 0.3v) parameter/condition symbol size -5* -6 units notes standby current: ttl i cc 1 16mb 9 9 ma (ras# = cas# = v ih ) 32mb 18 18 standby current: cmos i cc 2 16mb 9 9 ma (ras# = cas# = v dd - 0.2v) 32mb 9 9 operating current: random read/write i cc 3 16mb 990 900 ma 3, 24 average power supply current 32mb 1,980 1,800 (ras#, cas#, address cycling: t rc = t rc [min]) operating current: fast page mode i cc 4 16mb C 720 ma 3, 24 average power supply current 32mb C 1,440 (ras# = v il , cas#, address cycling: t pc = t pc [min]) operating current: edo page mode (x version only) i cc 5 16mb 990 900 ma 3, 24 average power supply current (x only) 32mb 1,980 1,800 (ras# = v il , cas#, address cycling: t pc = t pc [min]) refresh current: ras#-only i cc 6 16mb 990 900 ma 3, 24 average power supply current 32mb 1,980 1,800 (ras# cycling, cas# = v ih : t rc = t rc [min]) refresh current: cbr i cc 7 16mb 990 900 ma 3, 4 average power supply current 32mb 1,980 1,800 (ras#, cas#, address cycling: t rc = t rc [min]) * edo version only max
2, 4 meg x 72 nonbuffered dram dimms micron technology, inc., reserves the right to change products or specifications without notice. dm60.p65 C rev. 6/98 ? 1998, micron technology, inc. 10 2, 4 meg x 72 nonbuffered dram dimms obsolete capacitance parameter symbol 16mb 32mb units notes input capacitance: a0-a10 c i 1 51 96 pf 2 input capacitance: we0#, we2#, oe0#, oe2# c i 2 39 67 pf 2 input capacitance: ras0#, ras2# c i 3 39 67 pf 2 input capacitance: cas0#-cas7# c i 4 17 24 pf 2 input capacitance: scl, sa0-sa2 c i 5 66pf2 input/output capacitance: dq0-dq63, cb0-cb7, sda c io 10 10 pf 2 max fast page mode ac electrical characteristics (notes: 5, 6, 7, 8, 9, 12, 29) (v dd = +3.3v 0.3v) ac characteristics - fast page mode option -6 parameter symbol min max units notes access time from column address t aa 30 ns column-address hold time (referenced to ras#) t ar 45 ns column-address setup time t asc 0 ns row-address setup time t asr 0 ns column address to we# delay time t awd 55 ns 23 access time from cas# t cac 15 ns 14 column-address hold time t cah 10 ns cas# pulse width t cas 15 10,000 ns cas# hold time (cbr refresh) t chr 10 ns 4 cas# to output in low-z t clz 3 ns 25 cas# precharge time t cp 10 ns 15 access time from cas# precharge t cpa 35 ns cas# to ras# precharge time t crp 5 ns cas# hold time t csh 60 ns cas# setup time (cbr refresh) t csr 5 ns 4 cas# to we# delay time t cwd 40 ns 23 write command to cas# lead time t cwl 15 ns data-in hold time t dh 10 ns 22 data-in setup time t ds 0 ns 22 output disable t od 3 15 ns output enable t oe 15 ns oe# hold time from we# during read-modify-write cycle t oeh 15 ns 21 output buffer turn-off delay t off 3 15 ns 19, 25, 26 oe# setup prior to ras# during hidden refresh cycle t ord 0 ns fast-page-mode read or write cycle time t pc 35 ns
2, 4 meg x 72 nonbuffered dram dimms micron technology, inc., reserves the right to change products or specifications without notice. dm60.p65 C rev. 6/98 ? 1998, micron technology, inc. 11 2, 4 meg x 72 nonbuffered dram dimms obsolete fast page mode ac electrical characteristics (notes: 5, 6, 7, 8, 9, 12, 29) (v dd = +3.3v 0.3v) ac characteristics - fast page mode option -6 parameter symbol min max units notes fast-page-mode read-write cycle time t prwc 85 ns access time from ras# t rac 60 ns 13 ras# to column-address delay time t rad 15 ns 17 row-address hold time t rah 10 ns ras# pulse width t ras 60 10,000 ns ras# pulse width (fast page mode) t rasp 60 125,000 ns random read or write cycle time t rc 110 ns ras# to cas# delay time t rcd 20 ns 16 read command hold time (referenced to cas#) t rch 0 ns 18 read command setup time t rcs 0 ns refresh period (2,048 cycles) t ref 32 ms ras# precharge time t rp 40 ns ras# to cas# precharge time t rpc 0 ns read command hold time (referenced to ras#) t rrh 0 ns 18 ras# hold time t rsh 15 ns read-write cycle time t rwc 155 ns ras# to we# delay time t rwd 85 ns 23 write command to ras# lead time t rwl 15 ns transition time (rise or fall) t t250ns write command hold time t wch 10 ns write command hold time (referenced to ras#) t wcr 45 ns we# command setup time t wcs 0 ns 23 write command pulse width t wp 10 ns we# hold time (cbr refresh) t wrh 10 ns we# setup time (cbr refresh) t wrp 10 ns
2, 4 meg x 72 nonbuffered dram dimms micron technology, inc., reserves the right to change products or specifications without notice. dm60.p65 C rev. 6/98 ? 1998, micron technology, inc. 12 2, 4 meg x 72 nonbuffered dram dimms obsolete edo page mode ac electrical characteristics (notes: 5, 6, 7, 8, 9, 12, 29) (v dd = +3.3v 0.3v) ac characteristics - edo page mode option -5 -6 parameter symbol min max min max units notes access time from column address t aa 25 30 ns column-address setup to cas# precharge t ach 12 15 ns column-address hold time (referenced to ras#) t ar 38 45 ns column-address setup time t asc 0 0 ns row-address setup time t asr 0 0 ns column-address to we# delay time t awd 42 49 ns 23 access time from cas# t cac 13 15 ns 14 column-address hold time t cah 8 10 ns cas# pulse width t cas 8 10,000 10 10,000 ns cas# hold time (cbr refresh) t chr 8 10 ns 4 cas# to output in low-z t clz 0 0 ns data output hold after cas# low t coh 3 3 ns cas# precharge time t cp 8 10 ns 15 access time from cas# precharge t cpa 28 35 ns cas# to ras# precharge time t crp 5 5 ns cas# hold time t csh 38 45 ns cas# setup time (cbr refresh) t csr 5 5 ns 4 cas# to we# delay time t cwd 28 35 ns 23 write command to cas# lead time t cwl 8 10 ns data-in hold time t dh 8 10 ns 22 data-in setup time t ds 0 0 ns 22 output disable t od 0 12 0 15 ns output enable t oe 12 15 ns oe# hold time from we# during t oeh 8 10/12* ns 21 read-modify-write cycle oe# high hold time from cas# high t oehc 5 10 ns 21 oe# high pulse width t oep 5 5 ns oe# low to cas# high setup time t oes 4 5 ns output buffer turn-off delay t off 0 12 0 15 ns 19, 26 oe# setup prior to ras# t ord 0 0 ns during hidden refresh cycle edo-page-mode read or write cycle time t pc 20 25 ns edo-page-mode read-write cycle time t prwc 47 56 ns access time from ras# t rac 50 60 ns 13 ras# to column-address delay time t rad 9 12 ns 17 row-address hold time t rah 9 10 ns ras# pulse width t ras 50 10,000 60 10,000 ns ras# pulse width (edo page mode) t rasp 50 125,000 60 125,000 ns random read or write cycle time t rc 84 104 ns ras# to cas# delay time t rcd 11 14 ns 16 read command hold time (referenced to cas#) t rch 0 0 ns 18 read command setup time t rcs 0 0 ns refresh period (2,048 cycles) t ref 32 32 ms ras# precharge time t rp 30 40 ns
2, 4 meg x 72 nonbuffered dram dimms micron technology, inc., reserves the right to change products or specifications without notice. dm60.p65 C rev. 6/98 ? 1998, micron technology, inc. 13 2, 4 meg x 72 nonbuffered dram dimms obsolete edo page mode ac electrical characteristics (notes: 5, 6, 7, 8, 9, 12, 29) (v dd = +3.3v 0.3v) ac characteristics - edo page mode option -5 -6 parameter symbol min max min max units notes ras# to cas# precharge time t rpc 5 5 ns read command hold time (referenced to ras#) t rrh 0 0 ns 18 ras# hold time t rsh 13 15 ns read write cycle time t rwc 116 140 ns ras# to we# delay time t rwd 67 79 ns 23 write command to ras# lead time t rwl 13 15 ns transition time (rise or fall) t t250250ns write command hold time t wch 8 10 ns write command hold time (referenced to ras#) t wcr 38 45 ns we# command setup time t wcs 0 0 ns 23 output disable delay from we# (cas# high) t whz 0 12 0 15 ns write command pulse width t wp 5 5 ns we# pulse to disable at cas# high t wpz 10 10 ns we# hold time (cbr refresh) t wrh 8 10 ns we# setup time (cbr refresh) t wrp 8 10 ns
2, 4 meg x 72 nonbuffered dram dimms micron technology, inc., reserves the right to change products or specifications without notice. dm60.p65 C rev. 6/98 ? 1998, micron technology, inc. 14 2, 4 meg x 72 nonbuffered dram dimms obsolete serial presence-detect eeprom operating conditions (notes: 1) (v dd = +3.3v 0.3v) parameter/condition symbol min max units notes supply voltage v dd 3 3.6 v input high voltage: logic 1; all inputs v ih v dd 0.7 v dd + 0.5 v input low voltage: logic 0; all inputs v il -1 v dd 0.3 v output low voltage: i out = 3ma v ol C 0.4 v input leakage current: v in = gnd to v dd i li C10 m a output leakage current: v out = gnd to v dd i lo C10 m a standby current: i sb C30 m a scl = sda = v dd - 0.3v; all other inputs = gnd or 3.3v +10% power supply current: i cc C2ma scl clock frequency = 100 khz serial presence-detect eeprom ac electrical characteristics (notes: 1) (v dd = +3.3v 0.3v) parameter/condition symbol min max units notes scl low to sda data-out valid t aa 0.3 3.5 m s time the bus must be free before a new transition can start t buf 4.7 m s data-out hold time t dh 300 ns sda and scl fall time t f 300 ns data-in hold time t hd:dat 0 m s start condition hold time t hd:sta 4 m s clock high period t high 4 m s noise suppression time constant at scl, sda inputs t i 100 ns clock low period t low 4.7 m s sda and scl rise time t r1 m s scl clock frequency t scl 100 khz data-in setup time t su:dat 250 ns start condition setup time t su:sta 4.7 m s stop condition setup time t su:sto 4.7 m s write cycle time t wr 10 ms 28
2, 4 meg x 72 nonbuffered dram dimms micron technology, inc., reserves the right to change products or specifications without notice. dm60.p65 C rev. 6/98 ? 1998, micron technology, inc. 15 2, 4 meg x 72 nonbuffered dram dimms obsolete notes 1. all voltages referenced to v ss . 2. this parameter is sampled. v dd = +3.3v; f = 1 mhz. 3. i cc is dependent on output loading. specified values are obtained with minimum cycle time and the outputs open. 4. enables on-chip refresh and address counters. 5. the minimum specifications are used only to indicate cycle time at which proper operation over the full temperature range is ensured. 6. an initial pause of 100 m s is required after power-up, followed by eight ras# refresh cycles (ras#- only or cbr with we# high), before proper device operation is ensured. the eight ras# cycle wake-ups should be repeated any time the t ref refresh requirement is exceeded. 7. ac characteristics assume t t = 5ns for fpm and 2.5ns for edo. 8. v ih (min) and v il (max) are reference levels for measuring timing of input signals. transition times are measured between v ih and v il (or between v il and v ih ). 9. in addition to meeting the transition rate specifica- tion, all input signals must transit between v ih and v il (or between v il and v ih ) in a monotonic manner. 10. if cas# = v ih , data output is high-z. 11. if cas# = v il , data output may contain data from the last valid read cycle. 12. measured with a load equivalent to two ttl gates and 100pf and v ol = 0.8v and v oh = 2v. 13. requires that t aa and t rac are not violated. 14. requires that t aa and t cac are not violated. 15. if cas# is low at the falling edge of ras#, q will be maintained from the previous cycle. to initiate a new cycle and clear the data-out buffer, cas# must be pulsed high for t cp. 16. the t rcd (max) limit is no longer specified. t rcd (max) was specified as a reference point only. if t rcd was greater than the specified t rcd (max) limit, then access time was controlled exclusively by t cac ( t rac [min] no longer applied). with or without the t rcd (max) limit, t aa and t cac must always be met. 17. the t rad (max) limit is no longer specified. t rad (max) was specified as a reference point only. if t rad was greater than the specified t rad (max) limit, then access time was controlled exclusively by t aa ( t rac and t cac no longer applied). with or without the t rad (max) limit, t aa, t rac and t cac must always be met. 18. either t rch or t rrh must be satisfied for a read cycle. 19. t off (max) defines the time at which the output achieves the open circuit condition and is not referenced to v oh or v ol . 20. a hidden refresh may also be performed after a write cycle. in this case, we# = low and oe# = high. 21. late write and read-modify-write cycles must have both t od and t oeh met (oe# high during write cycle) in order to ensure that the output buffers will be open during the write cycle. the dqs will provide the previously read data if cas# remains low and oe# is taken back low after t oeh is met. if cas# goes high prior to oe# going back low, the dqs will remain open. 22. these parameters are referenced to cas# leading edge in early write cycles and we# leading edge in late write or read-modify-write cycles. 23. t wcs, t rwd, t awd and t cwd are not restrictive operating parameters. t wcs applies to early write cycles. t rwd, t awd and t cwd apply to read-modify-write cycles. if t wcs 3 t wcs (min), the cycle is an early write cycle and the data output will remain an open circuit throughout the entire cycle. if t wcs < t wsc (min) and t rwd 3 t rwd (min), t awd 3 t awd (min) and t cwd 3 t cwd (min), the cycle is a read-modify-write and the data output will contain data read from the selected cell. if neither of the above conditions is met, the state of data-out is indeterminate. oe# held high and we# taken low after cas# goes low result in a late write (oe#-controlled) cycle. t wcs, t rwd, t cwd and t awd are not applicable in a late write cycle. 24. column address changed once each cycle. 25. the 3ns minimum parameter guaranteed by design. 26. with the fpm option, t off is determined by the first ras# or cas# signal to transition high. in compari- son, t off on an edo option is determined by the latter of the ras# and cas# signals to transition high. 27. applies to both fpm and edo modules.
2, 4 meg x 72 nonbuffered dram dimms micron technology, inc., reserves the right to change products or specifications without notice. dm60.p65 C rev. 6/98 ? 1998, micron technology, inc. 16 2, 4 meg x 72 nonbuffered dram dimms obsolete notes (continued) 28. the spd eeprom write cycle time ( t wr) is the time from a valid stop condition of a write sequence to the end of the eeprom internal erase/program cycle. during the write cycle, the eeprom bus interface circuit are disabled, sda remains high due to pull-up resistor, and the eeprom does not respond to its slave address. 29. if oe# is tied permanently low, late write or read-modify-write operations are not possible. 30. v ih overshoot: v ih (max) = v dd + 2v for a pulse width 10ns, and the pulse width cannot be greater than one third of the cycle rate. v il undershoot: v il (min) = -2v for a pulse width 10ns, and the pulse width cannot be greater than one third of the cycle rate.
2, 4 meg x 72 nonbuffered dram dimms micron technology, inc., reserves the right to change products or specifications without notice. dm60.p65 C rev. 6/98 ? 1998, micron technology, inc. 17 2, 4 meg x 72 nonbuffered dram dimms obsolete read cycle 27 t rrh t clz t cac t rac t aa valid data open t off t rch row t rcs t asc t rah t rad t ar t cah t rcd t cas t rsh t csh t rp t rc t ras t crp t asr row open ras# v v ih il v v ih il addr v v ih il dq v v oh ol v v ih il t od t oe oe# v v ih il column cas# we# note 1 t ach don?t care undefined note: 1. for edo, t off is referenced from rising edge of ras# or cas#, whichever occurs last. for fpm, t off is referenced from rising edge of ras# or cas#, whichever occurs first. *edo version only t off (edo) 0 12 0 15 ns t off (fpm) C C 3 15 ns t rac 50 60 ns t rad (edo) 9 12 ns t rad (fpm) C 15 ns t rah 9 10 ns t ras 50 10,000 60 10,000 ns t rc (edo) 84 104 ns t rc (fpm) C 110 ns t rcd (edo) 11 14 ns t rcd (fpm) C 20 ns t rch 0 0 ns t rcs 0 0 ns t rp 30 40 ns t rrh 0 0 ns t rsh 13 15 ns -5* -6 symbol min max min max units fast page mode and edo page mode timing parameters -5* -6 symbol min max min max units t aa 25 30 ns t ach (edo) 12 15 ns t ar 38 45 ns t asc 0 0 ns t asr 0 0 ns t cac 13 15 ns t cah 8 10 ns t cas (edo) 8 10,000 10 10,000 ns t cas (fpm) C C 15 10,000 ns t clz (edo) 0 0 ns t clz (fpm) C 3 ns t crp 5 5 ns t csh (edo) 38 45 ns t csh (fpm) C 60 ns t od (edo) 0 12 0 15 ns t od (fpm) C C 3 15 ns t oe 12 15 ns
2, 4 meg x 72 nonbuffered dram dimms micron technology, inc., reserves the right to change products or specifications without notice. dm60.p65 C rev. 6/98 ? 1998, micron technology, inc. 18 2, 4 meg x 72 nonbuffered dram dimms obsolete early write cycle 27 don? care undefined v v ih il valid data row column row t ds t wp t wch t wcs t wcr t rwl t cwl t cah t asc t rah t asr t rad t ar t cas t rsh t csh t rcd t crp t ras t rc t rp v v ih il addr v v ih il v v ih il dq v v ioh iol v v ih il ras# oe# t dh we# cas# t ach *edo version only t rad (edo) 9 12 ns t rah 9 10 ns t ras 50 10,000 60 10,000 ns t rc (fpm) C 110 ns t rc (edo) 84 104 ns t rcd (fpm) C 20 ns t rcd (edo) 11 14 ns t rp 30 40 ns t rsh 13 15 ns t rwl 13 15 ns t wch 8 10 ns t wcr 38 45 ns t wcs 0 0 ns t wp (fpm) C 10 ns t wp (edo) 5 5 ns fast page mode and edo page mode timing parameters -5* -6 symbol min max min max units t ach (edo) 12 15 ns t ar 38 45 ns t asc 0 0 ns t asr 0 0 ns t cah 8 10 ns t cas (fpm) C C 15 10,000 ns t cas (edo) 8 10,000 10 10,000 ns t crp 5 5 ns t csh (fpm) C 60 ns t csh (edo) 38 45 ns t cwl (fpm) C 15 ns t cwl (edo) 8 10 ns t dh 8 10 ns t ds 0 0 ns t rad (fpm) C 15 ns -5* -6 symbol min max min max units
2, 4 meg x 72 nonbuffered dram dimms micron technology, inc., reserves the right to change products or specifications without notice. dm60.p65 C rev. 6/98 ? 1998, micron technology, inc. 19 2, 4 meg x 72 nonbuffered dram dimms obsolete t oe 15 ns t off 3 15 ns t pc 35 ns t rac 60 ns t rad 15 ns t rah 10 ns t rasp 60 125,000 ns t rcd 20 ns t rch 0 ns t rcs 0 ns t rp 40 ns t rrh 0 ns t rsh 15 ns fast-page-mode read cycle valid data valid data valid data column column column row row t rcs t cah t asc t cp t cas t rsh t cp t cas t cp t cas t rcd t crp t pc t csh t rasp t rp t cah t asc t cah t asc t ar t rah t rad t asr t rcs t rch t rch t rcs t rrh t rch t off t cac t cpa t aa t clz t off t cac t cpa t aa t clz t off t cac t rac t aa t clz t oe t od t oe t od t oe t od open open v v ih il cas# v v ih il addr v v ih il we# v v ih il dq v v ioh iol v v ih il ras# oe# don?t care undefined fast page mode timing parameters -6 symbol min max units t aa 30 ns t ar 45 ns t asc 0 ns t asr 0 ns t cac 15 ns t cah 10 ns t cas 15 10,000 ns t clz 3 ns t cp 10 ns t cpa 35 ns t crp 5 ns t csh 60 ns t od 3 15 ns -6 symbol min max units
2, 4 meg x 72 nonbuffered dram dimms micron technology, inc., reserves the right to change products or specifications without notice. dm60.p65 C rev. 6/98 ? 1998, micron technology, inc. 20 2, 4 meg x 72 nonbuffered dram dimms obsolete edo-page-mode read cycle valid data valid data valid data column column column row row don?t care undefined t od t cah t asc t cp t rsh t cp t cp t cas t rcd t crp t pc t csh t rasp t rp t cah t asc t cah t asc t ar t rah t rad t asr t rcs t rrh t rch t off t cac t cpa t aa t clz t cac t cpa t aa t cac t rac t aa t clz t oe t od t oe t od open open v v ih il v v ih il addr v v ih il v v ih il dq v v oh ol v v ih il ras# oe# t cas t cas cas# we# t coh t oep t oehc t oes t oes t ach t ach t ach -5 -6 symbol min max min max units t oehc 5 10 ns t oep 5 5 ns t oes 4 5 ns t off 0 12 0 15 ns t pc 20 25 ns t rac 50 60 ns t rad 9 12 ns t rah 9 10 ns t rasp 50 125,000 60 125,000 ns t rcd 11 14 ns t rch 0 0 ns t rcs 0 0 ns t rp 30 40 ns t rrh 0 0 ns t rsh 13 15 ns edo page mode timing parameters -5 -6 symbol min max min max units t aa 25 30 ns t ach 12 15 ns t ar 38 45 ns t asc 0 0 ns t asr 0 0 ns t cac 13 15 ns t cah 8 10 ns t cas 8 10,000 10 10,000 ns t clz 0 0 ns t coh 3 3 ns t cp 8 10 ns t cpa 28 35 ns t crp 5 5 ns t csh 38 45 ns t od 0 12 0 15 ns t oe 12 15 ns
2, 4 meg x 72 nonbuffered dram dimms micron technology, inc., reserves the right to change products or specifications without notice. dm60.p65 C rev. 6/98 ? 1998, micron technology, inc. 21 2, 4 meg x 72 nonbuffered dram dimms obsolete fast/edo-page-mode early write cycle 27 t ds t dh t ds t dh t ds t dh t wcr valid data valid data valid data t rwl t wp t cwl t wch t wcs t wp t cwl t wch t wcs t wp t cwl t wch t wcs t cah t asc t cah t asc t cah t asc t rah t asr t rad t ach t ach t ach t ar column column column row row t cp t cas t rsh t cp t cas t cp t cas t rcd t crp t pc t csh t rasp t rp v v ih il cas# v v ih il addr v v ih il we# v v ih il dq v v ioh iol ras# oe# v v ih il don?t care undefined * edo version only -5* -6 symbol min max min max units t pc (fpm) C 35 ns t rad (edo) 9 12 ns t rad (fpm) C 15 ns t rah 9 10 ns t rasp 50 125,000 60 125,000 ns t rcd (edo) 11 14 ns t rcd (fpm) C 20 ns t rp 30 40 ns t rsh 13 15 ns t rwl 13 15 ns t wch 8 10 ns t wcr 38 45 ns t wcs 0 0 ns t wp (edo) 5 5 ns t wp (fpm) C 10 ns fast page mode and edo page mode timing parameters -5* -6 symbol min max min max units t ach (edo) 12 15 ns t ar 38 45 ns t asc 0 0 ns t asr 0 0 ns t cah 8 10 ns t cas (edo) 8 10,000 10 10,000 ns t cas (fpm) C C 15 10,000 ns t cp 8 10 ns t crp 5 5 ns t csh (edo) 38 45 ns t csh (fpm) C 60 ns t cwl (edo) 8 10 ns t cwl (fpm) C 15 ns t dh 8 10 ns t ds 0 0 ns t pc (edo) 20 25 ns
2, 4 meg x 72 nonbuffered dram dimms micron technology, inc., reserves the right to change products or specifications without notice. dm60.p65 C rev. 6/98 ? 1998, micron technology, inc. 22 2, 4 meg x 72 nonbuffered dram dimms obsolete read-write cycle 27 (late write and read-modify-write cycles) valid d out valid d in row column row v v ih il v v ih il addr v v ih il v v ih il dq v v ioh iol v v ih il ras# open open t oe t od t cac t rac t aa t clz t ds t dh t awd t wp t rwl t cwl t cwd t rwd t rcs t asc t cah t ar t asr t rad t crp t rcd t cas t rsh t csh t ras t rwc t rp t rah oe# t oeh we# t ach cas# don?t care undefined -5* -6 symbol min max min max units t od (edo) 0 12 0 15 ns t od (fpm) C C 3 15 ns t oe 12 15 ns t oeh (edo) 8 10/12** ns t oeh (fpm) C 15 ns t rac 50 60 ns t rad (edo) 9 12 ns t rad (fpm) C 15 ns t rah 9 10 ns t ras 50 10,000 60 10,000 ns t rcd (edo) 11 14 ns t rcd (fpm) C 20 ns t rcs 0 0 ns t rp 30 40 ns t rsh 13 15 ns t rwc (edo) 116 140 ns t rwc (fpm) C 155 ns t rwd (edo) 67 79 ns t rwd (fpm) C 85 ns t rwl 13 15 ns t wp (edo) 5 5 ns t wp (fpm) C 10 ns fast page mode and edo page mode timing parameters -5* -6 symbol min max min max units t aa 25 30 ns t ach (edo) 12 15 ns t ar 38 45 ns t asc 0 0 ns t asr 0 0 ns t awd (edo) 42 49 ns t awd (fpm) C 55 ns t cac 13 15 ns t cah 8 10 ns t cas (edo) 8 10,000 10 10,000 ns t cas (fpm) C C 15 10,000 ns t clz (edo) 0 0 ns t clz (fpm) C 3 ns t crp 5 5 ns t csh (edo) 38 45 ns t csh (fpm) C 60 ns t cwd (edo) 28 35 ns t cwd (fpm) C 40 ns t cwl (edo) 8 10 ns t cwl (fpm) C 15 ns t dh 8 10 ns t ds 0 0 ns * edo version only **16mb dimm
2, 4 meg x 72 nonbuffered dram dimms micron technology, inc., reserves the right to change products or specifications without notice. dm60.p65 C rev. 6/98 ? 1998, micron technology, inc. 23 2, 4 meg x 72 nonbuffered dram dimms obsolete note: 1. t pc is for late write cycles only. fast/edo-page-mode read-write cycle 27 (late write and read-modify-write cycles) * edo version only **16mb dimm don? care undefined t oe t oe t oe open d out valid d in valid d out valid d in valid d out valid d in valid open t dh t ds t aa t cpa t clz t cac t dh t ds t aa t cpa t clz t cac t dh t ds t aa t clz t cac t rac t wp t cwl t rwl t cwd t awd t wp t cwl t cwd t awd t wp t cwl t cwd t awd t rcs t rwd t asr t rah t asc t rad t ar t cah t asc t cah t asc t cah t cp t cas t rsh t cp t rp t rasp t cas t cp t cas t rcd t csh t pc t crp row column column column row v v ih il cas# v v ih il addr v v ih il v v ih il dq v v ioh iol v v ih il ras# oe# we# t prwc t oeh t od t od t od note 1 -5* -6 symbol min max min max units t od (fpm) C C 3 15 ns t oe 12 15 ns t oeh (edo) 8 10/12** ns t oeh (fpm) C 15 ns t pc (edo) 20 25 ns t pc (fpm) C 35 ns t prwc (edo) 47 56 ns t prwc (fpm) C 85 ns t rac 50 60 ns t rad (edo) 9 12 ns t rad (fpm) C 15 ns t rah 9 10 ns t rasp 50 125,000 60 125,000 ns t rcd (edo) 11 14 ns t rcd (fpm) C 20 ns t rcs 0 0 ns t rp 30 40 ns t rsh 13 15 ns t rwd (edo) 67 79 ns t rwd (fpm) C 85 ns t rwl 13 15 ns t wp (edo) 5 5 ns t wp (fpm) C 10 ns fast page mode and edo page mode timing parameters -5* -6 symbol min max min max units t aa 25 30 ns t ar 38 45 ns t asc 0 0 ns t asr 0 0 ns t awd (edo) 42 49 ns t awd (fpm) C 55 ns t cac 13 15 ns t cah 8 10 ns t cas (edo) 8 10,000 10 10,000 ns t cas (fpm) C C 15 10,000 ns t clz (edo) 0 0 ns t clz (fpm) C 3 ns t cp 8 10 ns t cpa 28 35 ns t crp 5 5 ns t csh (edo) 38 45 ns t csh (fpm) C 60 ns t cwd (edo) 28 35 ns t cwd (fpm) C 40 ns t cwl (edo) 8 10 ns t cwl (fpm) C 15 ns t dh 8 10 ns t ds 0 0 ns t od (edo) 0 12 0 15 ns
2, 4 meg x 72 nonbuffered dram dimms micron technology, inc., reserves the right to change products or specifications without notice. dm60.p65 C rev. 6/98 ? 1998, micron technology, inc. 24 2, 4 meg x 72 nonbuffered dram dimms obsolete edo-page-mode read early write cycle (pseudo read-modify-write) v v ih il v v ih il ras# v v ih il addr v v ih il we# t rasp t rp row column (a) column (n) row v v ih il oe# v v ioh iol t crp t csh t cas t rcd t asr t rah t rad t asc t ar t cah t asc t cah t asc t cah t cp t rsh valid data in t rcs t rch t wcs t oe valid data (b) valid data (a) t whz t cac t cpa t aa t cac t aa open dq t pc rac t t coh t wch t ds t dh t pc column (b) t ach cas# t cas t cas t cp t cp don?t care undefined -5 -6 symbol min max min max units t oe 12 15 ns t pc 20 25 ns t rac 50 60 ns t rad 9 12 ns t rah 9 10 ns t rasp 50 125,000 60 125,000 ns t rcd 11 14 ns t rch 0 0 ns t rcs 0 0 ns t rp 30 40 ns t rsh 13 15 ns t wch 8 10 ns t wcs 0 0 ns t whz 0 12 0 15 ns edo page mode timing parameters -5 -6 symbol min max min max units t aa 25 30 ns t ach 12 15 ns t ar 38 45 ns t asc 0 0 ns t asr 0 0 ns t cac 13 15 ns t cah 8 10 ns t cas 8 10,000 10 10,000 ns t coh 3 3 ns t cp 8 10 ns t cpa 28 35 ns t crp 5 5 ns t csh 38 45 ns t dh 8 10 ns t ds 0 0 ns
2, 4 meg x 72 nonbuffered dram dimms micron technology, inc., reserves the right to change products or specifications without notice. dm60.p65 C rev. 6/98 ? 1998, micron technology, inc. 25 2, 4 meg x 72 nonbuffered dram dimms obsolete row valid data valid data open t crp t rcd t cas t rsh t rasp t rp t pc t asc t cah t ar t asr t rad t rah t wcs t wp t rwl t rcs t dh t ds t cac t off v v ih il cas# v v ih il addr v v ih il ras# dq v v oh ol we# v v ih il t csh column t cp t cp t asc t cah t cwl t wch t clz t aa rac don?t care undefined t note 1 oe# v v ih il row column t cas fast-page-mode read early write cycle (pseudo read-modify-write) note: 1. do not drive data prior to tristate. -6 symbol min max units t off 3 15 ns t pc 35 ns t rac 60 ns t rad 15 ns t rah 10 ns t rasp 60 125,000 ns t rcd 20 ns t rcs 0 ns t rp 40 ns t rsh 15 ns t rwl 15 ns t wch 10 ns t wcs 0 ns t wp 10 ns fast page mode timing parameters -6 symbol min max units t aa 30 ns t ar 45 ns t asc 0 ns t asr 0 ns t cac 15 ns t cah 10 ns t cas 15 10,000 ns t clz 3 ns t cp 10 ns t crp 5 ns t csh 60 ns t cwl 15 ns t dh 10 ns t ds 0 ns
2, 4 meg x 72 nonbuffered dram dimms micron technology, inc., reserves the right to change products or specifications without notice. dm60.p65 C rev. 6/98 ? 1998, micron technology, inc. 26 2, 4 meg x 72 nonbuffered dram dimms obsolete edo read cycle (with we#-controlled disable) t clz t cac t rac t aa valid data open t rch t rcs t asc t rah t rad t ar t cah t rcd t cas t csh t crp t asr row open ras# v v ih il v v ih il addr v v ih il dq v v oh ol v v ih il t od t oe oe# v v ih il column we# t whz t wpz t cp t asc t rcs column t clz don?t care undefined cas# -5 -6 symbol min max min max units edo page mode timing parameters -5 -6 symbol min max min max units t aa 25 30 ns t ar 38 45 ns t asc 0 0 ns t asr 0 0 ns t cac 13 15 ns t cah 8 10 ns t cas 8 10,000 10 10,000 ns t clz 0 0 ns t cp 8 10 ns t crp 5 5 ns t csh 38 45 ns t od 0 12 0 15 ns t oe 12 15 ns t rac 50 60 ns t rad 9 12 ns t rah 9 10 ns t rcd 11 14 ns t rch 0 0 ns t rcs 0 0 ns t whz 0 12 0 15 ns t wpz 10 10 ns
2, 4 meg x 72 nonbuffered dram dimms micron technology, inc., reserves the right to change products or specifications without notice. dm60.p65 C rev. 6/98 ? 1998, micron technology, inc. 27 2, 4 meg x 72 nonbuffered dram dimms obsolete ras#-only refresh cycle 27 row v v ih il cas# v v ih il addr v v ih il ras# t rc t ras t rp t crp t asr t rah row open dq v v oh ol t rpc we# v v ih il *edo version only cbr refresh cycle 27 (addresses, oe# = dont care) t rp v v ih il ras# t ras note 1 open t chr t csr v v ih il v v oh ol cas# dq t rp t ras t rpc t csr t rpc t chr t cp v v ih il t wrp t wrh we# t wrp t wrh don?t care undefined -5* -6 symbol min max min max units t rc (fpm) C 110 ns t rc (edo) 84 104 ns t rp 30 40 ns t rpc (fpm) C 0 ns t rpc (edo) 5 5 ns t wrh 8 10 ns t wrp 8 10 ns fast page mode and edo page mode timing parameters -5* -6 symbol min max min max units t asr 0 0 ns t chr 8 10 ns t cp 8 10 ns t crp 5 5 ns t csr 5 5 ns t rah 9 10 ns t ras 50 10,000 60 10,000 ns
2, 4 meg x 72 nonbuffered dram dimms micron technology, inc., reserves the right to change products or specifications without notice. dm60.p65 C rev. 6/98 ? 1998, micron technology, inc. 28 2, 4 meg x 72 nonbuffered dram dimms obsolete hidden refresh cycle 20, 27 (we# = high; oe# = low) don? care undefined t clz t off open valid data open column row t cac t rac t aa t cah t asc t rah t asr t rad t ar t crp t rcd t rsh t ras t rc t rp t chr t ras dq v v ioh iol v v ih il addr v v ih il cas# v v ih il ras# v v ih il t oe t od oe# t ord fast page mode and edo page mode timing parameters -5* -6 symbol min max min max units t aa 25 30 ns t ar 38 45 ns t asc 0 0 ns t asr 0 0 ns t cac 13 15 ns t cah 8 10 ns t chr 8 10 ns t clz (fpm) C 3 ns t clz (edo) 0 0 ns t crp 5 5 ns t od (fpm) C C 3 15 ns t od (edo) 0 12 0 15 ns t oe 12 15 ns t off (fpm) C C 3 15 ns -5* -6 symbol min max min max units t off (edo) 0 12 0 15 ns t ord 0 0 ns t rac 50 60 ns t rad (fpm) C 15 ns t rad (edo) 9 12 ns t rah 9 10 ns t ras 50 10,000 60 10,000 ns t rc (fpm) C 110 ns t rc (edo) 84 104 ns t rcd (fpm) C 20 ns t rcd (edo) 11 14 ns t rp 30 40 ns t rsh 13 15 ns *edo version only
2, 4 meg x 72 nonbuffered dram dimms micron technology, inc., reserves the right to change products or specifications without notice. dm60.p65 C rev. 6/98 ? 1998, micron technology, inc. 29 2, 4 meg x 72 nonbuffered dram dimms obsolete scl sda in sda out t low t su:sta t hd:sta t f t high t r t buf t dh t aa t su:sto t su:dat t hd:dat undefined serial presence-detect eeprom timing parameters symbol min max units t aa 0.3 3.5 m s t buf 4.7 m s t dh 300 ns t f 300 ns t hd:dat 0 m s t hd:sta 4 m s spd eeprom t high 4 m s t low 4.7 m s t r1 m s t su:dat 250 ns t su:sta 4.7 m s t su:sto 4.7 m s symbol min max units
2, 4 meg x 72 nonbuffered dram dimms micron technology, inc., reserves the right to change products or specifications without notice. dm60.p65 C rev. 6/98 ? 1998, micron technology, inc. 30 2, 4 meg x 72 nonbuffered dram dimms obsolete note: 1. all dimensions in inches (millimeters) max or typical where noted. min 168-pin dimm df-12 (16mb) .200 (5.08) max .054 (1.37) .046 (1.17) 1.005 (25.53) .995 (25.27) pin 1 (pin 85 on backside) .700 (17.78) typ .118 (3.00) (2x) .118 (3.00) typ 4.550 (115.57) .050 (1.27) typ .118 (3.00) typ .039 (1.00) typ .079 (2.00) r (2x) .039 (1.00) r(2x) front view .128 (3.25) .118 (3.00) pin 84 (pin 168 on backside) (2x) .250 (6.35) typ 1.661 (42.18) 2.625 (66.68) 5.256 (133.50) 5.244 (133.20) 168-pin dimm df-13 (32mb) .350 (8.89) max .054 (1.37) .046 (1.17) pin 1 .700 (17.78) typ .118 (3.00) (2x) .118 (3.00) typ .250 (6.35) typ 4.550 (115.57) .050 (1.27) typ .118 (3.00) typ .039 (1.00) typ .079 (2.00) r (2x) .039 (1.00) r(2x) pin 84 front view back view pin 168 .128 (3.25) .118 (3.00) (2x) pin 85 2.625 (66.68) 1.661 (42.18) 1.005 (25.53) .995 (25.27) 5.256 (133.50) 5.244 (133.20)

▲Up To Search▲

Price & Availability of MT18LD472AG

	To Download MT18LD472AG Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .